1. (Invited) 3D Neural Network: Monolithic Integration of Resistive-RAM Array with Oxide-Semiconductor FET. (8th September 2020) Authors: Kobayashi, Masaharu; Wu, Jixuan; Mo, Fei; Saraya, Takuya; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 98:Number 8(2020) Page Start: 57 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) A Nonvolatile SRAM Based on Ferroelectric HfO2 Capacitor for IoT Power Management. (9th April 2018) Authors: Kobayashi, Masaharu; Ueyama, Nozomu; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 85:Number 6(2018) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Pixel-Parallel 3-D Integrated CMOS Image Sensors for Next-Generation Video Systems. (10th April 2018) Authors: Goto, Masahide; Honda, Yuki; Watabe, Toshihisa; Hagiwara, Kei; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Higurashi, Eiji; Toshiyoshi, Hiroshi; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 85:Number 8(2018) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Pixel-Parallel CMOS Image Sensors with 16-Bit A/D Converters Developed by 3-D Integration of SOI Layers with Au/SiO2 Hybrid Bonding. (25th April 2016) Authors: Goto, Masahide; Hagiwara, Kei; Honda, Yuki; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Higurashi, Eiji; Toshiyoshi, Hiroshi; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 72:Number 3(2016) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Invited) Ultralow-Voltage Design and Technology of Silicon-on Thin-Buried-Oxide (SOTB) CMOS for High Energy Efficient Electronics in IoT Era. (27th March 2015) Authors: Yamamoto, Yoshiki; Makiyama, Hideki; Yamashita, Tomohiro; Oda, Hidekazu; Kamohara, Shiro; Sugii, Nobuyuki; Yamaguchi, Yasuo; Mizutani, Tomoko; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 66:Number 5(2015) Page Start: 43 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. A novel MOSFET with vertical signal‐transfer capability for 3D‐structured CMOS image sensors. Issue 3 (May 2014) Authors: Goto, Masahide; Hagiwara, Kei; Iguchi, Yoshinori; Ohtake, Hiroshi; Saraya, Takuya; Toshiyoshi, Hiroshi; Hiramoto, Toshiro Journal: IEEJ transactions on electrical and electronic engineering Issue: Volume 9:Issue 3(2014) Page Start: 329 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility. (1st May 2022) Authors: Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures. (1st May 2022) Authors: Mo, Fei; Mei, Xiaoran; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Au / SiO2 Hybrid Bonding with 6-μm-Pitch Au Electrodes for 3D Structured Image Sensors. (24th August 2016) Authors: Honda, Yuki; Hagiwara, Kei; Goto, Masahide; Watabe, Toshihisa; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Toshiyoshi, Hiroshi; Higurashi, Eiji; Hiramoto, Toshiro Journal: ECS transactions Issue: Volume 75:Number 9(2016) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET. (7th February 2022) Authors: Liu, Zihao; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗