Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET. (7th February 2022)

• Record Type: Journal Article
• Authors: Liu, Zihao; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SC(2022)
• Publication Date: 2022-02-07
• Subjects: Nanowire -- Variability -- Line width roughness; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac3a8c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this study, the width dependence of on-current variability in extremely narrow gate-all-around silicon nanowire MOSFET down to 2 nm width is analyzed by variability decomposition into components as well as analyzing the Pelgrom plot. It is found that the current variability rapidly increases below 4 nm mainly due to quantum-effect-induced threshold voltage variability and silicon-thickness-fluctuation-induced mobility fluctuation. The current variability becomes even worse in 2 nm, which is fundamentally caused by line width roughness.