A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility. (1st May 2022)

• Record Type: Journal Article
• Authors: Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SC(2022)
• Publication Date: 2022-05-01
• Subjects: MOSFET -- series resistance -- extraction; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac3eb7
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: A simple MOSFET series resistance extraction method using multiple drain current versus gate voltage curves of a single device is proposed, where mobility modulation by a horizontal electric field (i.e., weak velocity saturation) is taken into account. The method is validated using TCAD, where series resistance determined from internal potential distributions was used as a reliable reference. Measurement results were also obtained which further support the validity of the method.