(Invited) A Nonvolatile SRAM Based on Ferroelectric HfO2 Capacitor for IoT Power Management. (9th April 2018)

• Record Type: Journal Article
• Authors: Kobayashi, Masaharu; Ueyama, Nozomu; Hiramoto, Toshiro
• Is Part Of: ECS transactions. Volume 85:Number 6(2018)
• Page Start: 111
• Page End: 114
• Publication Date: 2018-04-09
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08506.0111ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : A nonvolatile SRAM has been designed and fabricated by integrating with ferroelectric HfO2 capacitors, and its store/recall operation before/after power-off have been experimentally demonstrated. Excellent ferroelectricity and memory characteristics have been obtained in sub-10nm-thick ferroelectric HfO2 capacitor. The NVSRAM with ferroelectric HfO2 capacitor can be a candidate for cost-effective, normally-off and ultralow power embedded memory solution for IoT power management.