(Invited) Pixel-Parallel CMOS Image Sensors with 16-Bit A/D Converters Developed by 3-D Integration of SOI Layers with Au/SiO2 Hybrid Bonding. (25th April 2016)

• Record Type: Journal Article
• Authors: Goto, Masahide; Hagiwara, Kei; Honda, Yuki; Nanba, Masakazu; Iguchi, Yoshinori; Saraya, Takuya; Kobayashi, Masaharu; Higurashi, Eiji; Toshiyoshi, Hiroshi; Hiramoto, Toshiro
• Is Part Of: ECS transactions. Volume 72:Number 3(2016)
• Page Start: 3
• Page End: 6
• Publication Date: 2016-04-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07203.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We have developed pixel-parallel CMOS image sensors with 16-bit A/D converters (ADCs) by 3-D integration of silicon-on-insulator (SOI) layers. Hybrid bonding of Au electrodes embedded in a SiO2 surface is suitable for a high-density interconnection to deliver pixel-parallel operation of the sensor. Photodiodes, ADCs, and counters are prepared on two SOI layers, and they are connected in each pixel to develop the 128 × 96 pixel-parallel sensors. We have demonstrated successful operation of video imaging with 16-bit digital output and a wide dynamic range of 96 dB, showing the feasibility of high performance 3-D integrated devices.