1. 75th anniversary of the transistor. (2023) Editors: Nathan, Arokia, 1957-; Saha, Samar K; Todi, Ravi M Record Type: Book Extent: 1 online resource (464 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. BS EN 63373. Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices. (8th April 2021) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (17 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. BS EN IEC 62951-9. Semiconductor devices. Flexible and stretchable semiconductor devices. Part 9. Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells (11th September 2020) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (19 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Code of practice for the use of semiconductor devices. Particular considerations Part 2, (11th October 1973) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (27 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Description of a parametrized European mini test chip. (15th September 1996) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (22 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Description of the reliability test structures of the European mini test chip. (15th September 1996) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (38 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level. (15th July 1978) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (6 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level. (15th January 1979) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (6 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level. (15th July 1978) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (6 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Detail specification for silicon n-p-n high frequency planar transistor. (15th March 1971) Authors: British Standards Institution, Record Type: Book Extent: 1 online resource (12 pages) View Content: Available online (eLD content is only available in our Reading Rooms) ↗