75th anniversary of the transistor. (2023)

• Record Type: Book
• Other Titles: Seventy-fifth anniversary of the transistor
• Further Information: Note: Edited by Arokia Nathan, Samar K. Saha, Ravi M. Todi.
• Editors: Nathan, Arokia, 1957-; Saha, Samar K; Todi, Ravi M
• Contents: Editor Biography xiii Preface xv 1 The First Quantum Electron Device 1 ; Leo Esaki 2 IEEE Electron Devices Society: A Brief History 3 ; Samar K. Saha 2.1 Introduction 3 2.2 Origins of EDS 4 2.3 Growth of EDS 6 2.4 Publications 10 2.5 Conferences 12 2.6 Awards and Recognition 14 2.7 Conclusion 14 3 Did Sir J.C. Bose Anticipate the Existence of p- and n-Type Semiconductors in His Coherer/Detector Experiments? 17 ; Prasanta Kumar Basu 3.1 Introduction 17 3.2 J.C. Bose: A Brief Biography 18 3.3 Bose's Work on Detectors 19 3.4 Mott's Remark 21 3.5 Understanding Semiconductors and Doping 21 3.6 Interpretation of Mott's Remark 23 3.7 Conclusion 25 4 The Point-Contact Transistor: A Revolution Begins 29 ; John M. Dallesasse and Robert B. Kaufman 4.1 Introduction 29 4.2 Background and Motivation 30 4.3 Inventors' Understanding How a Point-Contact Transistor Operates 31 4.4 Recreating the Point-Contact Transistor 33 4.5 Concluding Remarks 40 5 On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors 43 ; T. H. Ning 5.1 Introduction 43 5.2 Adaptation of Shockley Diode Equation to Modern Bipolar Transistors 45 5.3 Modern Bipolar Transistors Structures 46 5.4 Analytic Models for Modern Bipolar Transistors 48 5.5 Discussion 49 6 Junction-Less Field Effect Transistors: The First Transistor to be Conceptualized 51 ; Mamidala Jagadesh Kumar and Shubham Sahay 6.1 Introduction 51 6.2 Structure and Operation 52 6.3 Salient Features of JLFETs 55 6.4 Challenges for JLFETs 58 6.5 Unconventional Applications of JL Architecture 59 6.6 Conclusions 61 7 The First MOSFET Design by J. Lilienfeld and a Long Journey to Its Implementation 65 ; Hiroshi Iwai 7.1 Introduction 65 7.2 Demand for the Development of the Solid-State Amplifier and Its Difficulty 66 7.3 Grid-Inserted MESFETs 68 7.4 Lilienfeld Patents for the MESFET and MOSFET 69 7.5 Necessary Conditions for Successful MOSFET Operation, and MOSFET Development Chronology 72 7.6 Status of the Semiconductor Physics at the Lilienfeld Period (in the 1920s) and Thereafter 73 7.7 Improvement of Si and Ge Material Quality and Discovery of the pn Junction in the 1940s 74 7.8 H. Welker's MISFET with Inversion Channel in 1945 75 7.9 Shockley's Group Study for MOSFET from 1945 to 1947 76 7.10 Technology Development in the 1950s Until the Successful MOSFET Operation in 1960 79 7.11 Success of MOSFET Operation by D. Kahng and M. Attala in 1960 81 7.12 After the First Successful Operation of the MOSFET 82 7.13 Summary and Conclusions 82 8 The Invention of the Self-Aligned Silicon Gate Process 89 ; Robert E. Kerwin 9 The Application of Ion Implantation to Device Fabrication: The Early Days 95 ; Alfred U. MacRae 9.1 Introduction 95 9.2 Device Fabrication 96 9.3 Summary 99 10 Evolution of the MOSFET: From Microns to Nanometers 101 ; Yuan Taur 10.1 Introduction 101 10.2 The Early Days: Before 1980 102 10.3 From 1980 to 2000 103 10.4 The Latest: After 2000 109 10.5 Conclusion 113 11 The SOI Transistor 115 ; Sorin Cristoloveanu 11.1 The Beginnings 115 11.2 The Renaissance 116 11.3 The Smart-Cut Dynasty 119 11.4 Special Mechanisms in FD-SOI MOSFET 122 11.5 A Selection of Innovating Devices 126 11.6 The Future 130 12 FinFET: The 3D Thin-Body Transistor 135 ; Chenming Hu 12.1 The Show Stopper 135 12.2 The Cause of the Power Crises 135 12.3 The Real Cause of the Power Crises 137 12.4 A DARPA Request for Proposal 138 12.5 The Challenges and Team Work 139 12.6 Further Advancements by Industry 141 12.7 Conclusion 144 13 Historical Perspective of the Development of the FinFET and Process Architecture 145 ; Digh Hisamoto 13.1 Introduction 145 13.2 Requirements for the End of CMOS Scaling 146 13.3 Restrictions of Planar Process Technology 148 13.4 Prompted Device/Process Technology Evolution by FinFET 151 13.5 Conclusion 152 14 The Origin of the Tunnel FET 155 ; Gehan A. J. Amaratunga 14.1 Background 155 14.2 Conception 156 14.3 Realization 157 14.4 Relevance 159 14.5 Prospects 159 15 Floating-Gate Memory: A Prime Technology Driver of the Digital Age 163 ; S. M. Sze 15.1 Introduction 163 15.2 The Charge-Storage Concept 164 15.3 Early Device Structures 167 15.4 Multi-Level Cells and 3D Structures 169 15.5 Applications 171 15.6 Scaling Challenges 173 15.7 Alternative Structures 174 15.8 Conclusion 175 16 Development of ETOX NOR Flash Memory 179 ; Stefan K. Lai 16.1 Introduction 179 16.2 Background 179 16.3 Not the Perfect Solution 181 16.4 ETOX Development Challenges 182 16.5 Building a Business 183 16.6 Closing Words 184 17 History of MOS Memory Evolution on DRAM and SRAM 187 ; Mitsumasa Koyanagi 17.1 Introduction 187 17.2 Revolutionary Technologies in DRAM History 187 17.3 Revolutionary Technologies in SRAM History 202 17.4 Summary 210 18 Silicon-Germanium Heterojunction Bipolar Transistors: A Retrospective 215 ; Subramanian S. Iyer and John D. Cressler 18.1 Introduction (JDC) 215 18.2 Some History from Early Days at IBM Research (SSI) 218 18.3 SiGe Epitaxy and Making the First SiGe Transistor (SSI) 221 18.4 MBE vs. UHV/CVD vs. APCVD for SiGe epi (SSI) 224 18.5 Putting Physics to Work - The Properties of SiGe HBTs (JDC) 225 18.6 SiGe BiCMOS: Devices to Circuits to Systems (JDC and SSI) 228 18.7 Using SiGe in Extreme Environments (JDC) 231 18.8 New Directions (JDC and SSI) 234 18.9 Some Parting Words (SSI) 235 19 The 25-Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors 239 ; Colombo R. Bolognesi 19.1 Introduction 239 19.2 Phase I: Simon Fraser Years (1995-2006) 242 19.3 Phase II: ETH Years (2006-2022) 246 19.4 Response to Innovation 248 19.5 Final Words 249 20 The High Electron Mobility Transistor: 40 Years of Excitement and Surprises 253 ; Jesús A. del Alamo 20.1 Introduction 253 20.2 HEMT Electronics 254 20.3 Modulation-Doped Structures in Physics 257 20.4 Exciting Prospects 258 20.5 Conclusions 259 21 The Thin Film Transistor and Emergence of Large Area, Flexible Electronics and Beyond 263 ; Yue Kuo, Jin Jang, and Arokia Nathan 21.1 Birth of Large Area Electronics 263 21.2 Polycrystalline Silicon and Oxide Thin Film Transistor 265 21.3 Trends in TFT Development 266 22 Imaging Inventions: Charge-Coupled Devices 273 ; Michael F. Tompsett 22.1 Setting the Stage for the Invention of the Charge-Coupled Device (CCD) 273 <p&
• Edition: 1st
• Publisher Details: Hoboken : Wiley-IEEE Press
• Publication Date: 2023
• Extent: 1 online resource (464 pages)
• Subjects: 621.3815; Transistors
• Languages: English
• ISBNs: 9781394202461
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.