Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level. (15th July 1978)

Record Type:
Book
Title:
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level. (15th July 1978)
Main Title:
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level.
Authors:
British Standards Institution,
Publisher Details:
London : British Standards Institution
Publication Date:
1978
Extent:
1 online resource (6 pages)
Subjects:
602.1841
Bipolar transistors
Switches
Inspection
Electronic equipment and components
Design
Semiconductor devices
Switching circuits
Approval testing
Dimensions
Transistors
Epitaxial layers
Qualification approval
Rated voltage
Quality assurance systems
Assessed quality
Languages:
English
Related ISBNs:
0580103153
ISSNs:
0015-0028
Access Rights:
Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
Access Usage:
Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:
British Library HMNTS - ELD.DS.524180
Ingest File:
03_116.xml