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- 621.381505 25
- Electronic circuits -- Periodicals 25
- Electronic systems -- Periodicals 25
- FIR filters -- digital arithmetic -- computational complexity -- optimisation 1
- HEMT integrated circuits -- low noise amplifiers -- gallium arsenide -- high electron mobility transistors -- CMOS integrated circuits -- III‐V semiconductors -- radio transceivers -- MMIC power amplifiers -- field effect MIMIC -- millimetre wave field effect transistors 1
- MC‐DL‐SELBOX‐MOSFET -- selective buried oxide -- metal work functions -- metal controlled nanoscaled dopingless MOSFET -- partial buried oxide -- metal oxide semiconductor field‐effect transistor -- metal partial ground plane -- 2D simulation -- short channel performance -- short channel effects -- doping‐related complications -- low temperature processing -- source‐drain 1
- PWM control -- full‐bridge DC–DC converters -- field‐programmable gate arrays -- FPGA hardware implementation -- digital PWM -- switching frequency -- clock frequency -- counter‐based PWM -- high resolution FPGA pulse width modulation control -- complementary drivers -- software simulation -- phase‐locked loop -- electrosurgical devices -- frequency 100.0 kHz -- word length 12.0 bit -- word length 14.0 bit -- frequency 99.51 kHz to 99.70 kHz -- frequency 160.0 MHz to 480 MHz 1
- PWM power convertors -- DC‐DC power convertors -- field programmable gate arrays -- driver circuits -- bridge circuits 1
- SPICE -- memristors -- CMOS integrated circuits -- current conveyors -- electronic engineering computing -- integrated circuit modelling 1
- adiabatic logic scheme -- quasiadiabatic TCAM core cells -- complementary metal‐oxide semiconductor technology -- power clock -- QATCAM cells -- adiabatic TCAM arrays -- adiabatic peripheral circuits -- adiabatic TCAM core cells -- network search engines -- power‐efficiency quasiadiabatic ternary content addressable memory -- power‐efficiency TCAM -- size 180.0 nm -- voltage 1.8 V -- frequency 1.0 GHz 1