11. Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. (11th November 2019) Authors: Bian, Zhaoke; Su, Kai; Zhang, Jincheng; Zhao, Shenglei; Zhou, Hong; Zhang, Weihang; Zhang, Yachao; Zhang, Tao; Chen, Jiabo; Dang, Kui; Ning, Jing; Hao, Yue Journal: Journal of physics Issue: Volume 53:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. High performance GaN-based monolithic bidirectional switch using diode bridges. (17th August 2021) Authors: Wang, Haiyong; Mao, Wei; Yang, Cui; Zhao, Shenglei; Du, Ming; Wang, Xiaofei; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2. (19th March 2019) Authors: Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Zhang, Yachao; Chen, Tangsheng; Zhang, Kai; Wang, Yi; Dang, Kui; Bian, Zhaoke; Duan, Xiaoling; Ning, Jing; Zhao, Shenglei; Hao, Yue Journal: Applied physics express Issue: Volume 12:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment. (10th October 2019) Authors: Chen, Jiabo; Bian, Zhaoke; Liu, Zhihong; Ning, Jing; Duan, Xiaoling; Zhao, Shenglei; Wang, Haiyong; Tang, Qing; Wu, Yinhe; Song, Yuqin; Zhang, Jincheng; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 34:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique. Issue 7 (24th January 2020) Authors: Li, Zhongyang; Du, Lin; Lou, Jianshe; Jiang, Yun; Wang, Kunshu; Wen, Wei; Wang, Zhizhe; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode. (1st March 2023) Authors: Hua, Mingzhuo; Xu, Zhourui; Tian, Xusheng; Wang, Zhengxing; Zhang, Chunfu; Zhao, Shenglei; Zhang, Yachao; Ning, Jing; Feng, Qian; Zhang, Jincheng; Yue, Hao Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. (May 2016) Authors: Peng, Yue; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Liu, Yan; Wang, Yibo; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 144 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. (May 2016) Authors: Peng, Yue; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Liu, Yan; Wang, Yibo; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 144 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Methane Monitoring in Kitchen Based on ZigBee Antenna Array. (May 2020) Authors: Wang, Zhili; Zhao, Shenglei; Cheng, Xuezhen Journal: Journal of physics Issue: Volume 1550:Number 6(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Progress in state-of-the-art technologies of Ga2O3 devices. (31st March 2021) Authors: Wang, Chenlu; Zhang, Jincheng; Xu, Shengrui; Zhang, Chunfu; Feng, Qian; Zhang, Yachao; Ning, Jing; Zhao, Shenglei; Zhou, Hong; Hao, Yue Journal: Journal of physics Issue: Volume 54:Number 24(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗