High performance GaN-based monolithic bidirectional switch using diode bridges. (17th August 2021)

• Record Type: Journal Article
• Authors: Wang, Haiyong; Mao, Wei; Yang, Cui; Zhao, Shenglei; Du, Ming; Wang, Xiaofei; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
• Is Part Of: Applied physics express. Volume 14:Number 9(2021)
• Publication Date: 2021-08-17
• Subjects: bidirectional switch -- p-GaN gate -- HEMT -- diode bridge -- Schottky barrier diode; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac1b3f
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of ∼1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.