InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current. (May 2016)

• Record Type: Journal Article
• Authors: Peng, Yue; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Liu, Yan; Wang, Yibo; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
• Is Part Of: Superlattices and microstructures. Volume 93(2016)
• Page Start: 144
• Page End: 152
• Publication Date: 2016-05
• Subjects: TFET -- Band to band tunneling (BTBT) -- Heterojunction -- InN/In0.75Ga0.25N; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.03.004
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: InN/In0.75 Ga0.25 N complementary heterojunction-enhanced tunneling field-effect transistors (HE-TFETs) were characterized using the numerical simulation. InN/In0.75 Ga0.25 N HE-TFET has an InN/In0.75 Ga0.25 N heterojunction located in the channel region with a distance of L T-H from the source/channel tunneling junction. We demonstrate that, for both n- and p-channel devices, HE-TFETs have a delay of onset voltage V ONSET, a steeper subthreshold swing (SS), and an enhanced on-state current I ON in comparison with the homo-TFETs. InN/In0.75 Ga0.25 N n- and p-channel HE-TFETs with a gate length L G of 25 nm and a L T-H of 5 nm achieve a 7 and 9 times I ON improvement in comparison with the homo devices, respectively, at a supply voltage of 0.3 V. The performance enhancement in HE-TFETs is attributed to the modulating effect of heterojunction on band-to-band tunneling (BTBT). Because InN/In0.75 Ga0.25 N heterointerface shows the similar band offsets at conduction and valence bands, the InN/In0.75 Ga0.25 N heterojunction exhibits the improved effect on BTBT for both n- and p-channel devices. This makes InN/In0.75 Ga0.25 N heterojunction a promising structure for high performance complementary TFETs. Highlights: InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor (HE-CTFET) is designed and investigated. InN/InGaN n- and p-channel HE-TFETs demonstrate an improved I ON and SS compared to the InN homo TFET at V DD of 0.3 V. Impact of InN/InGaN heterojunction on BTBT in n-channel device is studied.