1. 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior. (1st April 2023) Authors: Song, Xiufeng; Zhang, Jincheng; Wu, Yinhe; Zhao, Shenglei; Du, Lin; Feng, Qi; Zhang, Weiwei; Wang, Zhongxu; Wu, Feng; Liu, Shuang; Liu, Zhihong; Hao, Yue Journal: Applied physics express Issue: Volume 16:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. (29th October 2021) Authors: Chen, Jiabo; Song, Xiufeng; Liu, Zhihong; Duan, Xiaoling; Wang, Haiyong; Bian, Zhaoke; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue Journal: Applied physics express Issue: Volume 14:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics. (30th June 2022) Authors: Song, Xiufeng; Sun, Baorui; Zhang, Jincheng; Zhao, Shenglei; Bian, Zhaoke; Liu, Shuang; Zhou, Hong; Liu, Zhihong; Hao, Yue Journal: Journal of physics Issue: Volume 55:Number 26(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Corrigendum: "A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings" [Appl. Phys. Express 14, 116504 (2021)]. (1st March 2022) Authors: Chen, Jiabo; Song, Xiufeng; Liu, Zhihong; Duan, Xiaoling; Wang, Haiyong; Bian, Zhaoke; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Demonstration of Al0.3Ga0.7N quasi-vertical Schottky barrier diodes with average breakdown electric field over 2 MV cm−1. (1st July 2022) Authors: Song, Xiufeng; Mo, Xingrui; Zhang, Jincheng; Du, Lin; Feng, Qi; Zhang, Weiwei; Yao, Yixin; Wu, Feng; Zhang, Yachao; Liu, Zhihong; Zhao, Shenglei; Hao, Yue Journal: Applied physics express Issue: Volume 15:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures. (13th September 2021) Authors: Chen, Jiabo; Liu, Zhihong; Wang, Haiyong; Song, Xiufeng; Bian, Zhaoke; Duan, Xiaoling; Zhao, Shenglei; Ning, Jing; Zhang, Jincheng; Hao, Yue Journal: Applied physics express Issue: Volume 14:Number 10(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of gamma irradiation on GaN lateral Schottky barrier diodes. Issue 1 (1st November 2022) Authors: Duan, Chao; Wu, Zhaoxi; Meng, Meng; Zhao, Shenglei; Wang, Xu; Yu, Qingkui Journal: Journal of physics Issue: Volume 2370: Issue 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes. (6th January 2022) Authors: Mao, Wei; Xu, Shihao; Wang, Haiyong; Yang, Cui; Zhao, Shenglei; Chen, Jiabo; Zhang, Yachao; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue Journal: Applied physics express Issue: Volume 15:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Enhanced breakdown voltage of Si-GaN monolithic heterogeneous integrated Cascode FETs by the device structure design. (April 2022) Authors: Zhang, Jiaqi; Zhang, Weihang; Wan, Jing; Yang, Guofang; Cheng, Ya'nan; Zhang, Yachao; Chen, Dazheng; Zhao, Shenglei; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue Journal: Solid-state electronics Issue: Volume 190(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation. Issue 5 (20th October 2014) Authors: Zhang, Kai; Chen, Xing; Mi, Minhan; Zhao, Shenglei; Chen, Yonghe; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue Journal: Physica status solidi Issue: Volume 212:Issue 5(2015:May) Page Start: 1081 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗