High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique. Issue 7 (24th January 2020)

• Record Type: Journal Article
• Authors: Li, Zhongyang; Du, Lin; Lou, Jianshe; Jiang, Yun; Wang, Kunshu; Wen, Wei; Wang, Zhizhe; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
• Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 7(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-24
• Subjects: AlGaN channel high-electron-mobility transistors -- breakdown voltage -- reduced surface field; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900793
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this article, reduced surface field (RESURF) AlGaN channel high‐electron‐mobility transistors (HEMTs) are proposed and investigated through 2D simulation for the first time. p+ doping is designed to form the RESURF structure, and the impact of the p+ doping density and length on breakdown characteristics is investigated. The breakdown voltage (BV) can be improved from 819 V for a conventional HEMT to 1746 V for a RESURF HEMT with a p+ doping density of 5 × 10 18 cm −3 and length of 4 μm. Although the specific on‐resistance ( R ON ) increases from 1.45 to 2.16 mΩ cm 2, the power figure of merit (FOM) increases from 2.49 × 10 8 to 8.28 × 10 8 V 2 Ω −1 cm −2 by utilizing a RESURF structure. By increasing the Al component of the RESURF AlGaN channel HEMT, the BV can be improved from 1746 to 2199 V. However, the R ON also increases from 3.68 to 8.04 mΩ cm 2, which leads to a decreasing of the power FOM. Simulation and analysis suggest that RESURF AlGaN channel HEMTs have great potential in power electronic applications. Abstract : Reduced surface field (RESURF) technology is used to improve the breakdown voltage (BV) of AlGaN channel high‐electron‐mobility transistors (HEMTs) by the Silvaco‐ATLAS simulator. By optimizing the p+ doping density and length, the BV of RESURF AlGaN channel HEMTs is improved significantly, by 113%. The power figure of merit (FOM) increases by 232.5% through utilizing a RESURF structure.