Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode. (1st March 2023)

• Record Type: Journal Article
• Authors: Hua, Mingzhuo; Xu, Zhourui; Tian, Xusheng; Wang, Zhengxing; Zhang, Chunfu; Zhao, Shenglei; Zhang, Yachao; Ning, Jing; Feng, Qian; Zhang, Jincheng; Yue, Hao
• Is Part Of: Semiconductor science and technology. Volume 38:Number 3(2023)
• Publication Date: 2023-03-01
• Subjects: gaswift heavy ion -- Schottky diode -- Ga2O3 -- electrical properties -- defect states; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/acb45e
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The radiation effect of swift heavy ions (16 MeV 181 Ta) on the Au/Ni/ β -Ga2 O3 vertical Schottky barrier diodes (SBDs) were investigated at the fluence of 1 × 10 8, 3 × 10 8 and 3 × 10 9 cm −2 . The SBDs were characterized by current density–voltage ( J–V) and capacitance–voltage ( C–V ) measurements. It was found that Schottky barrier height φ decreased from 1.11 eV to 0.94 eV, the ideality factor n increased from 1.01 to 1.29, turn-on voltage V on increased from 0.52 V to 0.80 V after radiation of 3 × 10 9 cm −2 . The reverse breakdown voltage was decreased from −405 V to −375 V, −350 V and −255 V after radiation of 1 × 10 8, 3 × 10 8 and 3 × 10 9 cm −2, respectively. In addition, the carrier concentration calculated from the capacitance–voltage curves was decreased significantly. Based on the G/ω–ω measurement results, the trap density at the Ni/ β -Ga2 O3 interface was extracted to be 2.89 × 10 15 –2.49 × 10 16 cm −2 eV −1 and 2.18 × 10 15 –4.98 × 10 16 cm −2 eV −1 with the energy level of 0.85–0.87 eV below the conduction band edge.