Progress in state-of-the-art technologies of Ga2O3 devices. (31st March 2021)

• Record Type: Journal Article
• Authors: Wang, Chenlu; Zhang, Jincheng; Xu, Shengrui; Zhang, Chunfu; Feng, Qian; Zhang, Yachao; Ning, Jing; Zhao, Shenglei; Zhou, Hong; Hao, Yue
• Is Part Of: Journal of physics. Volume 54:Number 24(2021)
• Publication Date: 2021-03-31
• Subjects: gallium oxide -- ohmic contact -- interface state -- power device -- radiofrequency device; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/abe158
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Gallium oxide (Ga2 O3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field of 8 MV cm −1, decent electron mobility of 250 cm 2 V s −1 and high theoretical Baliga figures of merit (BFOMs) of around 3000. Bolstered by their capability of an economical growth technique for high-quality bulk substrate, β -Ga2 O3 -based materials and devices have been highly sought after in recent years for power electronics and solar-blind ultraviolet photodetectors. This article reviews the most recent advances in β -Ga2 O3 power device technologies. It will begins with a summary of the field and underlying semiconductor properties of Ga2 O3, followed by a review of the growth methods of high-quality β -Ga2 O3 bulk substrates and epitaxial thin films. Then, brief perspectives on the advanced technologies and measurements in terms of ohmic contact and interface state are provided. Furthermore, some state-of-the-art β -Ga2 O3 photoelectronic devices, power devices and radiofrequency devices with distinguished performance are fully described and discussed. Some solutions to alleviating challenging issues, including the difficulty in p-type doping, low thermal conductivity and low mobility, are also presented and explored.