High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2. (19th March 2019)

• Record Type: Journal Article
• Authors: Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Zhang, Yachao; Chen, Tangsheng; Zhang, Kai; Wang, Yi; Dang, Kui; Bian, Zhaoke; Duan, Xiaoling; Ning, Jing; Zhao, Shenglei; Hao, Yue
• Is Part Of: Applied physics express. Volume 12:Number 4(2019)
• Publication Date: 2019-03-19
• Subjects: ; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab0712
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate high-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with Mo anode and low turn-on voltage of 0.31 V. AlGaN/GaN SBDs with anode to cathode spacing of 6/10/15/20/25 μ m achieve a breakdown voltage (BV) of 0.83/1.23/1.62/2.46/2.65 kV, yielding a power figure-of-merit (FOM) of 1.53/1.82/1.77/2.65/2.12 GW cm −2 . The power FOM of 2.65 GW cm −2 and BV of 2.65 kV are the best results of AlGaN/GaN SBDs on silicon substrate. Combined with the good dynamic performance with only 10% R on increase when switched from a −600 V stress for 10 ms, GaN SBDs verify their great promise for future power electronic applications.