1. Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K. (28th October 2016) Authors: Bordallo, C; Martino, J A; Agopian, P G D; Alian, A; Mols, Y; Rooyackers, R; Vandooren, A; Verhulst, A S; Smets, Q; Simoen, E; Claeys, C; Collaert, N Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures. (25th April 2017) Authors: Martino, M D V; Martino, J A; Agopian, P G D; Vandooren, A; Rooyackers, R; Simoen, E; Claeys, C Journal: Semiconductor science and technology Issue: Volume 32:Number 5(2017:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. (May 2019) Authors: Claeys, C; Hsu, P-C; He, L; Mols, Y; Langer, R; Waldron, N; Eneman, G; Collaert, N; Heyns, M; Simoen, E Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures. (11th November 2016) Authors: Cretu, B; Boudier, D; Simoen, E; Veloso, A; Collaert, N Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?. (14th December 2018) Authors: Simoen, E; O'Sullivan, B; Ritzenthaler, R; Dentoni-Litta, E; Schram, T; Horiguchi, N; Claeys, C Journal: Semiconductor science and technology Issue: Volume 34:Number 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy. (8th December 2020) Authors: Lechaux, Y; Minj, A; Méchin, L; Liang, H; Geens, K; Zhao, M; Simoen, E; Guillet, B Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy. (8th December 2020) Authors: Lechaux, Y; Minj, A; Méchin, L; Liang, H; Geens, K; Zhao, M; Simoen, E; Guillet, B Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates. (21st June 2019) Authors: Simoen, E; Hsu, P-C; Alian, A; El Kazzi, S; Wang, C Journal: Semiconductor science and technology Issue: Volume 34:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Deep levels in silicon–oxygen superlattices. (21st December 2015) Authors: Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M Journal: Semiconductor science and technology Issue: Volume 31:Number 2(2016:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Electronic properties of manganese impurities in germanium. (25th March 2015) Authors: Lauwaert, J; Segers, S H; Moens, F; Opsomer, K; Clauws, P; Callens, F; Simoen, E; Vrielinck, H Journal: Journal of physics Issue: Volume 48:Number 17(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗