Deep levels in silicon–oxygen superlattices. (21st December 2015)

• Record Type: Journal Article
• Authors: Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M
• Is Part Of: Semiconductor science and technology. Volume 31:Number 2(2016:Feb.)
• Publication Date: 2015-12-21
• Subjects: deep-level transient spectroscopy -- silicon–oxygen superlattices -- oxygen–silicon bonds -- dangling bonds -- MOS capacitor; 71.55.Cn -- 72.20.Jv; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/2/025015
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This work reports on the deep levels observed in Pt/Al2 O3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO2 interface has been observed as well.