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3. 513‐ppi Liquid Crystal Display Using C‐Axis Aligned Crystalline Oxide Semiconductor with Narrow Bezel and Aperture Ratio Greater Than 50%. Issue 1 (June 2014)

4. 52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide. Issue 1 (1st July 2013)

5. 52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide. Issue 1 (1st July 2013)

6. A 513‐ppi FFS‐mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode. Issue 4 (22nd October 2014)

7. A 513‐ppi FFS‐Mode TFT‐LCD using CAAC Oxide Semiconductor Fabricated by a 6‐Mask Proces. Issue 1 (June 2014)

8. Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide. Issue 1 (8th April 2014)

10. P.10: WITHDRAWN: P.11: Recognition of Existence of n‐type IGZO Layer in CAAC‐IGZO Film under Source and Drain Electrode Made of Tungsten. Issue 1 (1st July 2013)