52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Koezuka, Junichi; Okazaki, Kenichi; Hirohashi, Takuya; Takahashi, Masahiro; Adachi, Shunsuke; Tsubuku, Masashi; Yamazaki, Shunpei; Kanzaki, Yohsuke; Matsukizono, Hiroshi; Kaneko, Seiji; Mori, Shigeyasu; Matsuo, Takuya
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 723
• Page End: 726
• Publication Date: 2013-07-01
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06315.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We have fabricated a back‐channel‐etched TFT using the CAAC‐IGZO film that we developed. As a factor of success in manufacturing stable back‐channel‐etched TFTs, it is considered that CAAC‐IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energy of c‐IGZO and that of a‐IGZO.</p> </abstract>