Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide. Issue 1 (8th April 2014)

• Record Type: Journal Article
• Authors: Yamazaki, Shunpei; Hirohashi, Takuya; Takahashi, Masahiro; Adachi, Shunsuke; Tsubuku, Masashi; Koezuka, Junichi; Okazaki, Kenichi; Kanzaki, Yohsuke; Matsukizono, Hiroshi; Kaneko, Seiji; Mori, Shigeyasu; Matsuo, Takuya
• Is Part Of: Journal of the Society for Information Display. Volume 22:Issue 1(2014:Jan.)
• Page Start: 55
• Page End: 67
• Publication Date: 2014-04-08
• Subjects: Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.211
• Languages: English
• ISSNs: 1071-0922

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>Our crystalline In–Ga–Zn oxide (IGZO) thin film has a <italic>c</italic>‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has <italic>c</italic>‐axis alignment, its <italic>a</italic>‐axis and <italic>b</italic>‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.</p> </abstract>