P.10: WITHDRAWN: P.11: Recognition of Existence of n‐type IGZO Layer in CAAC‐IGZO Film under Source and Drain Electrode Made of Tungsten. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Tokumaru, Ryo; Tsubuku, Masashi; Yamane, Yasumasa; Inoue, Takayuki; Tanaka, Tetsuhiro; Matsubayashi, Daisuke; Suzawa, Hideomi; Yamazaki, Shunpei; Nakazawa, Yasutaka; Jintyou, Masami; Matsukizono, Hiroshi; Oda, Akihiro; Mori, Shigeyasu; Matsuo, Takuya
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 1022
• Page End: 1025
• Publication Date: 2013-07-01
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06396.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In a C‐axis aligned crystal (CAAC) IGZO TFT, contact between a CAAC‐IGZO film and source and drain electrode was good. In this study, we recognized the existence of n‐type IGZO layer serving as contact layer by a novel experimental method where a depth profile of the sheet resistance.</p> </abstract>