Invited Paper: Advantages of IGZO Oxide Semiconductor. Issue 1 (June 2014)
- Record Type:
- Journal Article
- Title:
- Invited Paper: Advantages of IGZO Oxide Semiconductor. Issue 1 (June 2014)
- Main Title:
- Invited Paper: Advantages of IGZO Oxide Semiconductor
- Authors:
- Matsuo, Takuya
Mori, Shigeyasu
Ban, Atsushi
Imaya, Akihiko - Abstract:
- <abstract abstract-type="main"> <title>Abstract</title> <p>Oxide semiconductors as represented by InGaZnO have been developed and used for driving TFT of LCD. Since there have been discussions on comparison of oxide semiconductors with amorphous and/or poly‐silicon which have been conventionally used for LCD, this paper will summarize pros and cons of each semiconductor material, deepen discussions for future developments, and clarify advantages of oxide semiconductors.</p> </abstract>
- Is Part Of:
- Digest of technical papers. Volume 45:Issue 1(2014)
- Journal:
- Digest of technical papers
- Issue:
- Volume 45:Issue 1(2014)
- Issue Display:
- Volume 45, Issue 1 (2014)
- Year:
- 2014
- Volume:
- 45
- Issue:
- 1
- Issue Sort Value:
- 2014-0045-0001-0000
- Page Start:
- 83
- Page End:
- 86
- Publication Date:
- 2014-06
- Subjects:
- Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/j.2168-0159.2014.tb00023.x ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3828.xml