Author/Creator: Yaita, Junya - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Yaita, Junya

1. A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors. (15th January 2021)

Authors:: Fukuda, Koichi; Hattori, Junichi; Asai, Hidehiro; Yaita, Junya; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number SB(2021)
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Record Type:: Journal Article
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2. Cellular automaton approach for carrier degeneracy effects on the electron mobility of high electron mobility transistors. (1st May 2022)

Authors:: Fukuda, Koichi; Hattori, Junichi; Asai, Hidehiro; Ninomiya, Mariko; Yaita, Junya; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number SC(2022)
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Record Type:: Journal Article
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3. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere. (1st July 2022)

Authors:: Yamada, Atsushi; Yaita, Junya; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number 7(2022)
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Record Type:: Journal Article
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4. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021)

Authors:: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
Journal:: Applied physics express
Issue:: Volume 14:Number 4(2021)
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Record Type:: Journal Article
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5. Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation. (14th June 2021)

Authors:: Yaita, Junya; Yamada, Atsushi; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number 7(2021)
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Record Type:: Journal Article
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6. Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation. (16th March 2015)

Authors:: Yaita, Junya; Iwasaki, Takayuki; Natal, Meralys; Saddow, Stephen E.; Hatano, Mutsuko
Journal:: Japanese journal of applied physics
Issue:: Volume 54:Number 4(2015:Apr.)Supplement
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Record Type:: Journal Article
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7. Influence of high-power density plasma on heteroepitaxial diamond nucleation on 3C-SiC surface. (24th March 2017)

Authors:: Yaita, Junya; Natal, Meralys; Saddow, Stephen E.; Hatano, Mutsuko; Iwasaki, Takayuki
Journal:: Applied physics express
Issue:: Volume 10:Number 4(2017)
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Record Type:: Journal Article
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8. Preferentially aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on Si substrates via 3C-SiC intermediate layers. (8th March 2018)

Authors:: Yaita, Junya; Tsuji, Takeyuki; Hatano, Mutsuko; Iwasaki, Takayuki
Journal:: Applied physics express
Issue:: Volume 11:Number 4(2018)
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Record Type:: Journal Article
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9. Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility. (19th February 2021)

Authors:: Yaita, Junya; Yamada, Atsuthi; Nakamura, Norikazu; Kotani, Junji
Journal:: Applied physics express
Issue:: Volume 14:Number 3(2021)
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Record Type:: Journal Article
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10. Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Issue 7 (3rd February 2022)

Authors:: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
Journal:: Physica status solidi
Issue:: Volume 219:Issue 7(2022)
Page Start:: n/a
Record Type:: Journal Article
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