Influence of high-power density plasma on heteroepitaxial diamond nucleation on 3C-SiC surface. (24th March 2017)

• Record Type: Journal Article
• Authors: Yaita, Junya; Natal, Meralys; Saddow, Stephen E.; Hatano, Mutsuko; Iwasaki, Takayuki
• Is Part Of: Applied physics express. Volume 10:Number 4(2017)
• Publication Date: 2017-03-24
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.045502
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Nucleation of a heteroepitaxial diamond on a heterogeneous substrate is a significant process that determines the quality of the diamond. We revealed that the use of high-power density plasma improved the orientation of a diamond on 3C-SiC/Si substrates. Physical analyses suggest that the epitaxial relationship between the diamond and the 3C-SiC can be retained if a large amount of atomic hydrogen is generated in the plasma. By subsequent film growth, we obtained a highly orientated diamond film with a tilt spread of 0.52°, which is the smallest value among diamond films on 3C-SiC buffer layers.