Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation. (16th March 2015)

• Record Type: Journal Article
• Authors: Yaita, Junya; Iwasaki, Takayuki; Natal, Meralys; Saddow, Stephen E.; Hatano, Mutsuko
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 4(2015:Apr.)Supplement
• Publication Date: 2015-03-16
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.04DH13
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Antenna-edge microwave plasma chemical vapor deposition was utilized for heteroepitaxial nucleation of diamond on 3C-SiC(001)/Si(001) substrates. A diamond grain density of 3 × 10 9 cm −2 was obtained after 2 h of growth under the 〈001〉 preferential growth conditions. A two-step growth process led to a highly-oriented diamond films by suppressing the growth of non-aligned grains. Sharply-defined reflection high energy electron diffraction patterns of diamond were observed. The crystalline quality of the diamond films were investigated by X-ray diffraction pole figure analysis and micro-Raman spectroscopy. After 30 h of growth, heteroepitaxial diamond films were obtained with a full width at half-maximum of 3.8° in the X-ray diffraction polar angle and 7 cm −1 in the diamond Raman peak. The surface of diamond films was observed by atomic force microscopy. Flat domain surfaces with a root mean square roughness of 0.45 nm in 1 × 1 µm 2 were obtained.