Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Issue 7 (3rd February 2022)

• Record Type: Journal Article
• Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
• Is Part Of: Physica status solidi. Volume 219:Issue 7(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-02-03
• Subjects: Al2O3 -- H2O vapor pretreatment -- InAlGaN/GaN high-electron-mobility transistors -- insulated-gate -- surface-oxide; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100638
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, Al2 O3 /InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H2 O vapor pretreatment to decrease the amount of deficient indium oxide (InO x ) is successfully developed. InO x acts as an electron trap in the oxide on the surface of the InAlGaN barrier layer. It is clarified that when O2 plasma is used as an oxidant source for atomic‐layer‐deposited (ALD) Al2 O3 (O2 plasma‐Al2 O3 ), the forward breakdown voltage increases using the MIS‐HEMT, due to a high density and a low leakage current of O2 plasma‐Al2 O3 . Furthermore, when using O2 plasma‐Al2 O3 for InAlGaN/GaN MIS‐HEMTs, H2 O vapor pretreatment is effective in decreasing the amount of InO x and electron traps in the oxide on the surface, thus suppressing current collapse. These results demonstrate the improved output power characteristics of the fabricated Al2 O3 /InAlGaN/GaN MIS‐HEMT and show the potential of surface‐oxide‐controlled MIS structures as promising process technologies for next‐generation high‐power radio frequency devices. Abstract : Herein, Al2 O3 /InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H2 O vapor pretreatment to decrease the amount of deficient indium oxide which acts as an electron trap in the oxide on the surface of the InAlGaN barrier layer is successfully developed. The improved output power characteristics of the InAlGaN/GaN HEMT using the MIS structure is demonstrated.