Preferentially aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on Si substrates via 3C-SiC intermediate layers. (8th March 2018)

• Record Type: Journal Article
• Authors: Yaita, Junya; Tsuji, Takeyuki; Hatano, Mutsuko; Iwasaki, Takayuki
• Is Part Of: Applied physics express. Volume 11:Number 4(2018)
• Publication Date: 2018-03-08
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.045501
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Nitrogen-vacancy (NV) centers in diamonds are expected for high-performance quantum sensing devices. The NV centers in heteroepitaxial diamond films on Si substrates have more potential to enable low-cost and large-area sensors than typical single-crystal diamond substrates and to support the emergence of diamond/Si hybrid devices. In this paper, NV centers were formed in (111) heteroepitaxial diamond films on Si substrates with preferential atomic alignment in the [111] direction. In addition, incorporation of silicon-vacancy centers, which decrease the sensitivity of sensors, from the 3C-SiC/Si substrate was effectively suppressed using oxygen gas in the growth environment.