First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021)

• Record Type: Journal Article
• Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
• Is Part Of: Applied physics express. Volume 14:Number 4(2021)
• Publication Date: 2021-03-18
• Subjects: GaN -- high-electron-mobility transistor (HEMT) -- free-standing AlN substrate -- X-band -- output power density; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abec90
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this letter, we successfully achieved high-power radio frequency (RF) operation of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN substrate at X-band. The developed HEMT on AlN substrate comprised a 200 nm thick GaN channel and AlGaN buffer with an Al composition of 30%. Thanks to high breakdown voltage of the HEMT on AlN substrate, we successfully demonstrated 15.2 W mm −1 output power density at operating voltages of 70 V even without device technologies such as source-field plate and optimization of device dimension. Our results show that the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.