1. Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]. (January 2023) Authors: Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]. (January 2023) Authors: Catapano, E.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. (January 2016) Authors: Le Royer, C.; Villalon, A.; Hutin, L.; Martinie, S.; Nguyen, P.; Barraud, S.; Glowacki, F.; Allain, F.; Bernier, N.; Cristoloveanu, S.; Vinet, M. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. (November 2015) Authors: Fenouillet-Beranger, C.; Previtali, B.; Batude, P.; Nemouchi, F.; Cassé, M.; Garros, X.; Tosti, L.; Rambal, N.; Lafond, D.; Dansas, H.; Pasini, L.; Brunet, L.; Deprat, F.; Grégoire, M.; Mellier, M.; Vinet, M. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 2 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Germanium on insulator and new 3D architectures opportunities for integration. (22nd February 2010) Authors: Vinet, M.; Le Royer, C.; Batude, P.; Damlencourt, J-F.; Hartmann, J-M.; Hutin, L.; Romanjek, K.; Pouydebasque, A.; Thomas, O. Journal: International journal of nanotechnology Issue: Volume 7:Number 4/5/6/7/8(2010) Page Start: 304 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. (December 2017) Authors: Paz, B.C.; Doria, R.T.; Cassé, M.; Barraud, S.; Reimbold, G.; Vinet, M.; Faynot, O.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 79(2017) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs. (January 2016) Authors: Hutin, L.; Oeflein, R.P.; Borrel, J.; Martinie, S.; Tabone, C.; Le Royer, C.; Vinet, M. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 160 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures. (July 2022) Authors: Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 193(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Modeling of 1D confinement in FD-SOI trigate nanowires at deep cryogenic temperatures. (December 2022) Authors: Catapano, E.; Cassé, M.; Gaillard, F.; Meunier, T.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 198(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Nanoelectronics with CMOS transistors: electrostatic and quantum effects. (22nd February 2010) Authors: Jehl, Xavier; Sanquer, Marc; Gautier, J.; Vinet, M. Journal: International journal of nanotechnology Issue: Volume 7:Number 4/5/6/7/8(2010) Page Start: 288 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗