Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. (January 2016)

• Record Type: Journal Article
• Authors: Le Royer, C.; Villalon, A.; Hutin, L.; Martinie, S.; Nguyen, P.; Barraud, S.; Glowacki, F.; Allain, F.; Bernier, N.; Cristoloveanu, S.; Vinet, M.
• Is Part Of: Solid-state electronics. Volume 115 Part B(2016)
• Page Start: 167
• Page End: 172
• Publication Date: 2016-01
• Subjects: Tunnel FET -- TFET -- SOI -- SiGe -- SGOI -- ION; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.10.007
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: We report the fabrication and the characterization of tunnel FETs fabricated on SiGe-On-Insulator with a High-κ Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on I D ( V G ) characteristics is presented and analyzed: compressive Si0.75 Ge0.25 enables to increase by a factor of 25 the saturation currents, even at small gate length ( L G = 50 nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).