Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]. (January 2023)

Record Type:: Journal Article
Title:: Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]. (January 2023)
Main Title:: Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]
Authors:: Catapano, E.
Cassé, M.
Gaillard, F.
de Franceschi, S.
Meunier, T.
Vinet, M.
Ghibaudo, G.
Abstract:
Is Part Of:: Solid-state electronics. Volume 199(2023)
Journal:: Solid-state electronics
Issue:: Volume 199(2023)
Issue Display:: Volume 199, Issue 2023 (2023)
Year:: 2023
Volume:: 199
Issue:: 2023
Issue Sort Value:: 2023-0199-2023-0000
Page Start:
Page End:
Publication Date:: 2023-01
Subjects:: Semiconductors -- Periodicals
Semiconducteurs -- Périodiques
621.38152
Journal URLs:: http://www.sciencedirect.com/science/journal/00381101 ↗
http://www.elsevier.com/journals ↗
DOI:: 10.1016/j.sse.2022.108541 ↗
Languages:: English
ISSNs:: 0038-1101
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 8327.385000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 24442.xml