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Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]. (January 2023)
Record Type:
Journal Article
Title:
Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]. (January 2023)
Main Title:
Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]