1. Advanced Raman Spectroscopy Using Nanofocusing of Light1 . Issue 8 (13th January 2017) Authors: Nuytten, Thomas; Bogdanowicz, Janusz; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried Journal: Advanced engineering materials Issue: Volume 19:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity. (17th August 2018) Authors: Chiappe, Daniele; Ludwig, Jonathan; Leonhardt, Alessandra; El Kazzi, Salim; Nalin Mehta, Ankit; Nuytten, Thomas; Celano, Umberto; Sutar, Surajit; Pourtois, Geoffrey; Caymax, Matty; Paredis, Kristof; Vandervorst, Wilfried; Lin, Dennis; De Gendt, Stefan; Barla, Kathy; Huyghebaert, Cedric; Asselberg... Journal: Nanotechnology Issue: Volume 29:Number 42(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Nucleation and growth mechanism of 2D SnS2 by chemical vapor deposition: initial 3D growth followed by 2D lateral growth. (10th April 2018) Authors: Zhang, Haodong; van Pelt, Thomas; Mehta, Ankit Nalin; Bender, Hugo; Radu, Iuliana; Caymax, Matty; Vandervorst, Wilfried; Delabie, Annelies Journal: 2D materials Issue: Volume 5:Number 3(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Suppression of boron incorporation at the early growth phases of boron‐doped diamond thin films. Issue 11 (22nd July 2015) Authors: Tsigkourakos, Menelaos; Hantschel, Thomas; Xu, Zheng; Douhard, Bastien; Meersschaut, Johan; Zou, Yiming; Larsson, Karin; Boman, Mats; Vandervorst, Wilfried Journal: Physica status solidi Issue: Volume 212:Issue 11(2015:Nov.) Page Start: 2595 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Industrial application of atom probe tomography to semiconductor devices. (15th April 2018) Authors: Giddings, Alexander Devin; Koelling, Sebastian; Shimizu, Yasuo; Estivill, Robert; Inoue, Koji; Vandervorst, Wilfried; Yeoh, Wai Kong Journal: Scripta materialia Issue: Number 148(2018) Page Start: 82 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrical Contact Formation in Micro Four‐Point Probe Measurements. Issue 5 (12th November 2019) Authors: Folkersma, Steven; Bogdanowicz, Janusz; Petersen, Dirch H.; Hansen, Ole; Henrichsen, Henrik H.; Nielsen, Peter F.; Shiv, Lior; Vandervorst, Wilfried Journal: Physica status solidi Issue: Volume 217:Issue 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. (22nd February 2019) Authors: Vohra, Anurag; Porret, Clement; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Opportunities and Challenges in APT Metrology for Semiconductor Applications. (August 2019) Authors: Fleischmann, Claudia; Cuduvally, Ramya; Morris, Richard; Melkonyan, Davit; de Beeck, Jonathan Op; Makhotkin, Igor; van der Heide, Paul; Vandervorst, Wilfried Journal: Microscopy and microanalysis Issue: Volume 25:(2022)Supplement 2 Page Start: 312 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. APT Tip Shape Modifications During Analysis, Its Implications, and the Potential to Measure Tip Shapes in Real Time via Soft-X-Ray Ptychography. (August 2019) Authors: van der Heide, Paul; Mathotkin, Igor; Vandervorst, Wilfried; Fleischmann, Claudia Journal: Microscopy and microanalysis Issue: Volume 25:(2022)Supplement 2 Page Start: 2504 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx. (7th May 2020) Authors: Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clement; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗