Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity. (17th August 2018)

• Record Type: Journal Article
• Authors: Chiappe, Daniele; Ludwig, Jonathan; Leonhardt, Alessandra; El Kazzi, Salim; Nalin Mehta, Ankit; Nuytten, Thomas; Celano, Umberto; Sutar, Surajit; Pourtois, Geoffrey; Caymax, Matty; Paredis, Kristof; Vandervorst, Wilfried; Lin, Dennis; De Gendt, Stefan; Barla, Kathy; Huyghebaert, Cedric; Asselberghs, Inge; Radu, Iuliana
• Is Part Of: Nanotechnology. Volume 29:Number 42(2018)
• Publication Date: 2018-08-17
• Subjects: 2D materials -- MoS2 -- MO-CVD -- thin films; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aad798
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.