Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. (22nd February 2019)

• Record Type: Journal Article
• Authors: Vohra, Anurag; Porret, Clement; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SB(2019)
• Publication Date: 2019-02-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab027b
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report on production compatible low temperature (≤320 °C) selective epitaxial growth schemes for boron doped Ge0.99 Sn0.01 and Ge in source/drain areas of FinFET and gate-all-around (GAA) strained-Ge pMOS transistors. Active B concentrations are as high as 3.2 × 10 20 cm −3 and 2.2 × 10 20 cm −3 for Ge0.99 Sn0.01 and Ge, respectively. The Ge:B growth is based on a cyclic deposition and etch approach using Cl2 as an etchant, while the Ge0.99 Sn0.01 :B growth is selective in nature. Low Ti/p+ Ge(Sn):B contact resistivities of 3.6 × 10 −9 Ω cm 2 (Ge0.99 Sn0.01 ) and 5.5 × 10 −9 Ω cm 2 (Ge:B) have been obtained without any post - epi activation anneal. This work is the first demonstration of a selective, conformally doped Ge1− x Sn x :B source/drain epi implemented on Ge FinFET device structure with fin widths down to 10 nm and on GAA devices (horizontal compressively strained-Ge nanowires).