1. A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility. (1st May 2022) Authors: Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Correlation between static random access memory power-up state and transistor variation. (10th February 2017) Authors: Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Shinohara, Hirofumi; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Corrigendum: "A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility" [Jpn. J. Appl. Phys. 61, SC1016 (2022)]. (1st April 2022) Authors: Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Design space exploration of hysteretic negative capacitance ferroelectric FETs based on static solutions of Landau–Khalatnikov model for nonvolatile memory applications. (8th March 2021) Authors: Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 60:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of percolation path on temperature dependence of threshold voltage variability in bulk MOSFETs. (8th February 2022) Authors: Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Oka, Hiroshi; Mori, Takahiro; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Estimation of minimum operating voltage in fully depleted SOI SRAM cells using gamma distribution. (1st May 2022) Authors: Yu, Hongkuan; Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes. (25th February 2019) Authors: Kobayashi, Hiroto; Yokogawa, Ryo; Kinoshita, Kosuke; Numasawa, Yohichiroh; Ogura, Atsushi; Nishizawa, Shin-ichi; Saraya, Takuya; Ito, Kazuo; Takakura, Toshihiko; Suzuki, Shin-ichi; Fukui, Munetoshi; Takeuchi, Kiyoshi; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Hyperbolic localization and Lefschetz fixed point formulas for higher-dimensional fixed point sets. (6th March 2017) Authors: Ike, Yuichi; Matsui, Yutaka; Takeuchi, Kiyoshi Journal: International mathematics research notices Issue: Volume 2018:Number 15(2018) Page Start: 4852 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs. (4th March 2020) Authors: Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Kakushima, Kuniyuki; Hoshii, Takuya; Tsutsui, Kazuo; Iwai, Hiroshi; Nishizawa, Shin-ichi; Omura, Ichiro; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 59:Number SG(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application. (5th March 2018) Authors: Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗