Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs. (4th March 2020)

• Record Type: Journal Article
• Authors: Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Kakushima, Kuniyuki; Hoshii, Takuya; Tsutsui, Kazuo; Iwai, Hiroshi; Nishizawa, Shin-ichi; Omura, Ichiro; Hiramoto, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 59:Number SG(2020)
• Publication Date: 2020-03-04
• Subjects: IGBT -- Scaling -- Injection Enhancement -- Power Device; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab7414
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled ( k = 1) and scaled ( k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.