1. (Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires. (26th April 2017) Authors: Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy Yakovitch; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Åke; Dekkers, Harold F. W.; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Manna... Journal: ECS transactions Issue: Volume 77:Number 5(2017) Page Start: 19 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications. (24th March 2021) Authors: Spessot, Alessio; Ritzenthaler, Romain; Litta, Eugenio Dentoni; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits. (16th March 2018) Authors: Litta, Eugenio Dentoni; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications. (14th September 2015) Authors: Simoen, Eddy; Ritzenthaler, Romain; Cho, Moon Ju; Schram, Tom; Horiguchi, Naoto; Aoulaiche, Marc; Spessot, Alessio; Fazan, Pierre; Claeys, Cor Journal: ECS transactions Issue: Volume 69:Number 10(2015) Page Start: 281 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs. (October 2021) Authors: Simoen, Eddy; de Oliveira, Alberto Vinicius; Agopian, Paula Ghedini Der; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Martino, Joao Antonio; Claeys, Cor; Veloso, Anabela Journal: Solid-state electronics Issue: Volume 184(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Optimized material solutions for advanced DRAM peripheral transistors (Phys. Status Solidi A 2∕2016). Issue 2 (11th February 2016) Authors: Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Horiguchi, Naoto; Fazan, Pierre Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 484 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Optimized material solutions for advanced DRAM peripheral transistors. Issue 2 (2nd February 2016) Authors: Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Horiguchi, Naoto; Fazan, Pierre Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 245 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Treatments for reliability improvement in thick oxides diffusion and gate replacement I/O transistors. (2017) Authors: Ritzenthaler, Romain; Cho, Moonju; Schram, Tom; Spessot, Alessio; Simoen, Eddy; O'Sullivan, Barry J.; Litta, Eugenio Dentoni; Horiguchi, Naoto Journal: International journal of materials engineering innovation Issue: Volume 8:Number 1(2017) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗