1. Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport. (April 2018) Authors: Oproglidis, T.A.; Karatsori, T.A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 142(2018) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs. (January 2021) Authors: Oproglidis, T.A.; Tsormpatzoglou, A.; Tassis, D.H.; Theodorou, C.G.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 175(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Corrigendum to "Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model" [Solid-State Electron. 170 (2020) 107835]. (September 2020) Authors: Oproglidis, T.A.; Tassis, D.H.; Tsormpatzoglou, A.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 171(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model. (August 2020) Authors: Oproglidis, T.A.; Tassis, D.H.; Tsormpatzoglou, A.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 170(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs. (February 2017) Authors: Karatsori, T.A.; Theodorou, C.G.; Haendler, S.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Impact of dynamic variability on the operation of CMOS inverter. Issue 19 (1st September 2013) Authors: Ioannidis, E.G.; Haendler, S.; Manceau, J.‐P.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Electronics letters Issue: Volume 49:Issue 19(2013) Page Start: 1214 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗