Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs. Issue 17 (1st August 2016)

• Record Type: Journal Article
• Authors: Karatsori, T.A.; Theodorou, C.G.; Dimitriadis, C.A.; Ghibaudo, G.
• Is Part Of: Electronics letters. Volume 52:Issue 17(2016)
• Page Start: 1492
• Page End: 1493
• Publication Date: 2016-08-01
• Subjects: MOSFET -- carrier mobility -- oscillators -- semiconductor device models -- semiconductor device measurement -- capacitance; AC signal oscillator level -- effective mobility measurement -- split C–V technique -- MOSFET -- nonlinearity -- gate‐to‐channel capacitance -- channel inversion charge -- physical model -- gate voltage; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.1715
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The impact of the AC signal oscillator level on the effective mobility measurement by split C–V technique in MOSFETs is investigated. It is found that, due to strong nonlinearity below threshold, the gate‐to‐channel capacitance and, by turn, the channel inversion charge increases linearly with the oscillator level. As a consequence, the extracted effective mobility decreases linearly with the oscillator level, resulting in a huge underestimation of the effective mobility in weak inversion. A physical model explaining these behaviours is developed, which enables to obtain a quantitative description of both inversion charge and effective mobility variations with the oscillator level and the gate voltage.