71. Reliability testing of a 3D encapsulated VHF MEMS resonator *Project supported by the National Key Research and Development Program of China (No. 2017YFB0405400), the National Natural Science Foundation of China (Nos. 61234007, 61734007, 61404136, 61704166), and the Key Research Program of Frontier Science of CAS (No. QYZDY-SSW-JSC004). (October 2018) Authors: Wang, Fengxiang; Yuan, Quan; Kan, Xiao; Zhao, Jicong; Chen, Zeji; Yang, Jinling; Yang, Fuhua Journal: Journal of semiconductors Issue: Volume 39:Number 10(2018:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
72. Research progress of III–V laser bonding to Si. (December 2016) Authors: Ren 任, Bo 博; Hou 侯, Yan 艳; Liang 梁, Yanan 亚楠 Journal: Journal of semiconductors Issue: Volume 37:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
73. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes *Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium. (January 2018) Authors: Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong Journal: Journal of semiconductors Issue: Volume 39:Number 1(2018:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
74. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs. (September 2015) Authors: Fang 方, Wen 雯; Simoen, Eddy; Chikang, Li; Aoulaiche, Marc; Luo 罗, Jun 军; Zhao 赵, Chao 超; Claeys, Cor Journal: Journal of semiconductors Issue: Volume 36:Number 9(2015:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
75. Silicon-graphene photonic devices *Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200). (June 2018) Authors: Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin Journal: Journal of semiconductors Issue: Volume 39:Number 6(2018:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
76. Static performance model of GaN MESFET based on the interface state *Project supported by the Taiyuan Institute of Technology School Foundation. (December 2018) Authors: Li, Xiaohong; Wang, Ruirong; Chen, Tong Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
77. Stretchable human-machine interface based on skin-conformal sEMG electrodes with self-similar geometry *Project supported by the National Natural Science Foundation of China (Nos. 51635007, 91323303). (January 2018) Authors: Dong, Wentao; Zhu, Chen; Hu, Wei; Xiao, Lin; Huang, Yong'an Journal: Journal of semiconductors Issue: Volume 39:Number 1(2018:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
78. The applications of carbon nanomaterials in fiber-shaped energy storage devices *Project supported by the National Natural Science Foundation of China (Nos. 21634003, 21604012). (January 2018) Authors: Wu, Jingxia; Hong, Yang; Wang, Bingjie Journal: Journal of semiconductors Issue: Volume 39:Number 1(2018:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
79. Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs*Project supported by the National Major Science and Technology Special Project (No. 2013ZX02305005-002), and the National Natural Science Foundation Major Program (No. 51490681). (July 2016) Authors: Teng 滕, Yuan 渊; Zhu 朱, Yangjun 阳军; Han 韩, Zhengsheng 郑生; Ye 叶, Tianchun 甜春 Journal: Journal of semiconductors Issue: Volume 37:Number 7(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
80. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator*Project supported by the National Natural Science Foundation of China (Nos. 61474101, 61106130) and the Natural Science Foundation of Jiangsu Province of China (No. BK20131072). (September 2015) Authors: Wang 王, Zheli 哲力; Zhou 周, Jianjun 建军; Kong 孔, Yuechan 月婵; Kong 孔, Cen 岑; Dong 董, Xun 逊; Yang 杨, Yang 洋; Chen 陈, Tangsheng 堂胜 Journal: Journal of semiconductors Issue: Volume 36:Number 9(2015:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗