Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs. (September 2015)

• Record Type: Journal Article
• Authors: Fang 方, Wen 雯; Simoen, Eddy; Chikang, Li; Aoulaiche, Marc; Luo 罗, Jun 军; Zhao 赵, Chao 超; Claeys, Cor
• Is Part Of: Journal of semiconductors. Volume 36:Number 9(2015:Sep.)
• Publication Date: 2015-09
• Subjects: 2560; random telegraph noise -- low frequency noise -- ultra-thin BOX -- silicon-on-insulator -- single charge trap; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/9/094005
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude Δ I D / I D, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric V DS dependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed the asymmetry of the V DS dependence of the switched source and drain is related to the lateral trap position along the source and drain.