Static performance model of GaN MESFET based on the interface state *Project supported by the Taiyuan Institute of Technology School Foundation. (December 2018)

• Record Type: Journal Article
• Authors: Li, Xiaohong; Wang, Ruirong; Chen, Tong
• Is Part Of: Journal of semiconductors. Volume 39:Number 12(2018:Dec.)
• Publication Date: 2018-12
• Subjects: GaN MESFET -- static performance model -- interface states; 2560; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/39/12/124003
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor (MESFET) based on the metal–semiconductor interface state of the Schottky junction. The I–V performances of MESFET under different channel lengths and different operating systems (pinch-off or not) have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity C gd, the source–gate capacity C gs, the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square (RMS) errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.