1. 2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps. (February 2019) Authors: Hezabra, A.; Abdeslam, N. A.; Sengouga, N.; Yagoub, M. C. E. Journal: Journal of semiconductors Issue: Volume 40:Number 2(2019:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 3D modelling based comprehensive analysis of high-κ gate stack graded channel dual material trigate MOSFET *Project supported by the Ministry of Electronics and Information Technology (MEITy), Govt. of India under its Visvesvaraya PhD Scheme (PhD-MLA/4(55)/2015-16). (December 2018) Authors: Shora, Aadil T.; Khanday, Farooq A. Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of strained silicon on the device performance of a bipolar charge plasma transistor. (December 2018) Authors: Singh, Sangeeta Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design. (December 2018) Authors: Jain, Neeraj; Raj, Balwinder Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application *Project supported by the Zhejiang National Natural Science Foundation of China (No. LQ17F040001) and the Key Laboratory Open Project Fund of Southeast University, China (No. K201817). (December 2018) Authors: Mao, Yanfei; E, Shiju; Schmalz, Klaus; Christoph Scheytt, J. Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Influence of well doping on the performance of UTBB MOSFETs *Project supported by the National Key R&D Plan (No. 2016YFA0202101). (December 2018) Authors: Ren, Yuqi; Huang, Shizhen; Shen, Lei; Liu, Xiaoyan; Du, Gang Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Model of NBTI combined with mobility degradation *Project supported by the Shenzhen Science and Technology Project (Nos. ZDSYS201703031405137, JCYJ20170810163407761, (JCYJ20170818114156474), the PhD Start-up Fund of Natural Science Foundation of Guangdong Province (No. 2015A030310499), and the China Postdoctoral Science Foundation Funded Project (No. 2015T80023). (December 2018) Authors: Wu, Xuezhong; Ma, Chenyue; Gao, Shucheng; Li, Xiangbin; Sun, Fu; Zhang, Lining; Lin, Xinnan Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Hydrodynamic simulations of terahertz oscillation in double-layer graphene *Project supported by the National Natural Science Foundation of China (No. 11604126). (December 2018) Authors: Feng, Wei Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Electrical contacts to two-dimensional transition-metal dichalcogenides. (December 2018) Authors: Wang, Shuxian; Yu, Zhihao; Wang, Xinran Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture. (November 2015) Authors: Zhao 赵, Yuanfu 元富; Zheng 郑, Hongchao 宏超; Fan 范, Long 隆; Yue 岳, Suge 素格; Chen 陈, Maoxin 茂鑫; Du 杜, Shougang 守刚 Journal: Journal of semiconductors Issue: Volume 36:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗