1. 245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application *Project supported by the Zhejiang National Natural Science Foundation of China (No. LQ17F040001) and the Key Laboratory Open Project Fund of Southeast University, China (No. K201817). (December 2018) Authors: Mao, Yanfei; E, Shiju; Schmalz, Klaus; Christoph Scheytt, J. Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps. (February 2019) Authors: Hezabra, A.; Abdeslam, N. A.; Sengouga, N.; Yagoub, M. C. E. Journal: Journal of semiconductors Issue: Volume 40:Number 2(2019:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 3D modelling based comprehensive analysis of high-κ gate stack graded channel dual material trigate MOSFET *Project supported by the Ministry of Electronics and Information Technology (MEITy), Govt. of India under its Visvesvaraya PhD Scheme (PhD-MLA/4(55)/2015-16). (December 2018) Authors: Shora, Aadil T.; Khanday, Farooq A. Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 4500 V SPT+ IGBT optimization on static and dynamic losses*Project supported by the National Major Science and Technology Special Project of China (No. 2011ZX02504-002). (September 2015) Authors: Dai 戴, Qingyun 庆芸; Tian 田, Xiaoli 晓丽; Zhang 张, Wenliang 文亮; Lu 卢, Shuojin 烁今; Zhu 朱, Yangjun 阳军 Journal: Journal of semiconductors Issue: Volume 36:Number 9(2015:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A dual Vt disturb-free subthreshold SRAM with write-assist and read isolation. (February 2018) Authors: Bhatnagar, Vipul; Kumar, Pradeep; Pandey, Neeta; Pandey, Sujata Journal: Journal of semiconductors Issue: Volume 39:Number 2(2018:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. A high EMS daisy-chain SPI interface for battery monitor system *Project supported by the National Natural Science Foundation of China (No. 61334003). (March 2017) Authors: Zhang, Qidong; Yang, Yintang; Chai, Changchun Journal: Journal of semiconductors Issue: Volume 38:Number 3(2017:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer*Project supported by the National Key Research and Development Program of China (No. 2016YFB0402404), the High-Tech Research and Development Program of China (Nos. 2013AA031401, 2015AA016902, 2015AA016904), and the National Natural Foundation of China (Nos. 61674136, 61176053, 61274069, 61435002). (April 2017) Authors: Wang, Yubing; Yin, Weihong; Han, Qin; Yang, Xiaohong; Ye, Han; Lü, Qianqian; Yin, Dongdong Journal: Journal of semiconductors Issue: Volume 38:Number 4(2017:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. A small signal coupling model for predicting the coupling between LNAs *Project supported by the National Natural Science Foundation of China (No. 61401025). (July 2017) Authors: Shi, Junyu; Cui, Dasheng; Wu, Yuming Journal: Journal of semiconductors Issue: Volume 38:Number 7(2017:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. A superjunction structure using high-k insulator for power devices: theory and optimization*Project supported by the National Natural Science Foundation of China (No. 51237001). (June 2016) Authors: Mingmin 黄, Huang 铭敏; Xingbi 陈, Chen 星弼 Journal: Journal of semiconductors Issue: Volume 37:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS *Project supported partly by the National Natural Science Foundation of China (No. 60123456) and partly by the National 13th Five-Year Project. (December 2018) Authors: Gong, Jie; Li, Wei; Hu, Jintao; Ye, Jiao; Wang, Tao Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗