Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator*Project supported by the National Natural Science Foundation of China (Nos. 61474101, 61106130) and the Natural Science Foundation of Jiangsu Province of China (No. BK20131072). (September 2015)

• Record Type: Journal Article
• Authors: Wang 王, Zheli 哲力; Zhou 周, Jianjun 建军; Kong 孔, Yuechan 月婵; Kong 孔, Cen 岑; Dong 董, Xun 逊; Yang 杨, Yang 洋; Chen 陈, Tangsheng 堂胜
• Is Part Of: Journal of semiconductors. Volume 36:Number 9(2015:Sep.)
• Publication Date: 2015-09
• Subjects: 2560; enhancement-mode (E-mode) -- AlGaN/GaN -- metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) -- atomic layer deposition (ALD) -- Al2O3; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/9/094004
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al0.3 Ga0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al2 O3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al2 O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length ( L G ) of 1 μm showed a maximum drain current density ( I DS ) of 657 mA/mm, a maximum extrinsic transconductance ( g m ) of 187 mS/mm and a threshold voltage ( V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al2 O3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS .