1. Comprehensive study of the radiation effects on the LDMOS transistors. (December 2022) Authors: Lei, Zeyu; Zhang, Chenchen; Wu, Ming; Zou, Xuming; Yan, Junzheng; Chen, Zhuojun Journal: Microelectronics and reliability Issue: Volume 139(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors. Issue 10 (13th January 2016) Authors: Zou, Xuming; Huang, Chun‐Wei; Wang, Lifeng; Yin, Long‐Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen‐Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei Journal: Advanced materials Issue: Volume 28:Issue 10(2016) Page Start: 2062 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces. (10th July 2022) Authors: Li, Yang; Zhang, Xisai; Duan, Xinpei; Niu, Wencheng; Zhao, Shengjie; He, Xiaobo; Huang, Hao; Liu, Xingqiang; Zou, Xuming; Li, Lei; Shan, Fukai; Yang, Zhenyu Journal: Advanced Electronic Materials Issue: Volume 8:Number 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Epitaxial growth of non-layered PbSe nanoplates on MoS2 monolayer for infrared photoresponse. (9th April 2019) Authors: Chen, Tianren; Fan, Chao; Zhou, Weichang; Zou, Xuming; Xu, Xing; Wang, Songyang; Wan, Qiang; Zhang, Qinglin Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Flexible Quasi‐2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection. Issue 6 (23rd December 2019) Authors: Wei, Shali; Wang, Fang; Zou, Xuming; Wang, Liming; Liu, Chang; Liu, Xingqiang; Hu, Weida; Fan, Zhiyong; Ho, Johnny C.; Liao, Lei Journal: Advanced materials Issue: Volume 32:Issue 6(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Floating Gate Memory‐based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics. Issue 2 (13th August 2014) Authors: Wang, Jingli; Zou, Xuming; Xiao, Xiangheng; Xu, Lei; Wang, Chunlan; Jiang, Changzhong; Ho, Johnny C.; Wang, Ti; Li, Jinchai; Liao, Lei Journal: Small Issue: Volume 11:Issue 2(2015) Page Start: 208 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer. Issue 37 (8th July 2016) Authors: Wang, Jingli; Yao, Qian; Huang, Chun‐Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen‐Wei Journal: Advanced materials Issue: Volume 28:Issue 37(2016) Page Start: 8302 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor1. Issue 22 (14th June 2015) Authors: Zhang, Zhangyuan; Zou, Xuming; Xu, Lei; Liao, Lei; Liu, Wei; Ho, Johnny; Xiao, Xiangheng; Jiang, Changzhong; Li, Jinchai Journal: Nanoscale Issue: Volume 7:Issue 22(2015) Page Start: 10078 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors. (10th May 2018) Authors: Jiang, Bei; Zou, Xuming; Su, Jie; Liang, Jinghua; Wang, Jingli; Liu, Huijun; Feng, Liping; Jiang, Changzhong; Wang, Feng; He, Jun; Liao, Lei Journal: Advanced functional materials Issue: Volume 28:Number 26(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions. (15th July 2020) Authors: Bi, Jiahe; Zou, Xuming; Lv, Yawei; Li, Guoli; Liu, Xingqiang; Liu, Yuan; Yu, Ting; Yang, Zhenyu; Liao, Lei Journal: Advanced Electronic Materials Issue: Volume 6:Number 8(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗