Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors. Issue 10 (13th January 2016)

• Record Type: Journal Article
• Authors: Zou, Xuming; Huang, Chun‐Wei; Wang, Lifeng; Yin, Long‐Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen‐Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei
• Is Part Of: Advanced materials. Volume 28:Issue 10(2016)
• Page Start: 2062
• Page End: 2069
• Publication Date: 2016-01-13
• Subjects: 2D materials -- boron nitride -- dielectric engineering -- heterostructures -- transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201505205
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A unique design of a hexagonal boron nitride (h‐BN)/HfO2 dielectric heterostructure stack is demonstrated, with few‐layer h‐BN to alleviate the surface optical phonon scattering, followed by high‐κ HfO2 deposition to suppress Coulombic impurity scattering so that high‐performance top‐gated two‐dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN‐based transistors to enhance their performance.