High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer. Issue 37 (8th July 2016)

• Record Type: Journal Article
• Authors: Wang, Jingli; Yao, Qian; Huang, Chun‐Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen‐Wei
• Is Part Of: Advanced materials. Volume 28:Issue 37(2016)
• Page Start: 8302
• Page End: 8308
• Publication Date: 2016-07-08
• Subjects: contact resistance -- hexagonal boron nitride -- MoS2 -- tunneling; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602757
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.